Abstract
An approach, by which non-paraxial semiconductor laser beam is collected non-truncatedly and transformed into paraxial one, is given. Equivalent optical beam quality factor of a strained multiple quantum well laser diode (MQW-LD) is measured experimentally. It is shown that the M 2 y in vertical direction (perpendicular to the junction) is obviously smaller than 1. The key is that the whole thickness including active layer and the emission layers should be much smaller than the wavelength of the laser, and how to measure the optical beam quality factor by non-truncated method. Discovery of semiconductor laser beams having initial nature of M 2 y <1 will promote the study of LD science, LD technology and LD applications.
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