Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure

Abstract

We demonstrate the effectiveness of a hybrid multiple-quantum-wells (MQWs) structure in InGaN-based orange light-emitting diodes (LEDs) grown by metalorganic vapor phase epitaxy. The hybrid MQWs-LED is composed of orange InGaN double QWs and a blue-green InGaN single QW. Using the hybrid MQWs structure, the orange LEDs exhibited electroluminescence spectra with narrow full widths at half maximum of 51 nm at 20 mA. The light output power and external quantum efficiency of the InGaN-based orange LEDs were 0.23 mW and 0.6%, respectively, at 20 mA.