Abstract
GaN MIS diodes were demonstrated utilizing AlN and Ga 2O 3(Gd 2O 3) as insulators. A 345 Å of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a SVT RF N 2 plasma. For the Ga 2O 3(Gd 2O 3) growth, a multi-MBE chamber was used and a 195 Å oxide was E-beam evaporated from a single crystal source of Ga 5Gd 3O 12. The forward breakdown voltage of AlN and Ga 2O 3(Gd 2O 3) diodes are 5 and 6 V, respectively, which are significantly improved over ∼1.2 V from that of a Schottky contact. From the C–V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator/GaN interface roughness and the thickness of the insulator were measured with X-ray reflectivity.
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