Abstract
Abstract In this study, the implementation of Cu-based materialization in the GaN high electron mobility transistor (HEMT) was investigated. The TiN in the proposed Ti/TiN/Cu Ohmic metal stack mitigated the diffusion of Cu and the alloy formation at the interface, resulting in higher stability. The specific contact resistance (ρc) was found to be 6.68×10−6 Ω-cm², comparable to that of Au-based counterparts in other published articles. Additionally, Cu-based HEMTs, fabricated with TiN/Cu gate metals, showed superior electrical properties (IDS: 1023 mA/mm, Gm: 570 mS/mm) and enhanced reliability compared to Au-based HEMTs. TiN layer of gate metal stack can effectively improve electrical performance over Au/Ni or Cu/Ni gates by preventing Cu diffusion. RF measurements showed a ƒmax of 99.6 GHz and a ƒT of 33 GHz. Load-pull results indicated a maximum output power of 8.63 W/mm, a gain of 21.05 dBm, and a PAE of 59.71%. These findings suggest that Cu-based HEMTs are promising, cost-effective, Au-free alternatives for future mass production.
Published Version
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