Abstract
We have demonstrated an electrically pumped distributed feedback nitride laser diode employing embedded dielectric third order gratings (EDG) for the first time. The gratings were fabricated in a silicon nitride layer that was subsequently incorporated into the epitaxial structure via lateral epitaxial overgrowth (LEO). DFB lasers have been demonstrated in the nitride system employing etched GaN gratings by optical and electrical pumping. By laterally overgrowing a dielectric, a high index contrast grating can be achieved in an electrically pumped structure.
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