Abstract
Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
