Abstract
By adding a low temperature growth step to the conventional MBE technique deltadoped profiles on a nanometer scale have been fabricated. Multilayered structures of bothn- andp-type doping have been characterized by secondary ion mass spectrometry and electron microscopy. Using shadow masks locally doped sample were grown, in order to allow individual contacts ton- as well asp-doped layers. In-plane and vertical electronic transport properties have been measured as a function of temperature. In an-i-p-i doping superlattice photogenerated carriers exhibited enhanced lifetimes. The recombination lifetime was determined by the photovoltage decay.
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