Abstract
This paper deals with the structural properties of a-Si:H/ a-Si 1− x C x : H multilayers deposited by glow-discharge decomposition of SiH 4 and SiH 4 and CH 4 mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time and its influence on the multilayer obtained is discussed. A series of a-Si:H/ a-Si 1− x C x : H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers present a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at the nanometer scale is discussed.
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