Abstract
We report on the silicon delta doping of metalorganic vapor-phase epitaxy grown β-Ga2O3 thin films using silane as a precursor. The delta-doped β-Ga2O3 epitaxial films are characterized using capacitance–voltage profiling and secondary-ion mass spectroscopy. The sheet charge density is in the range of 2.9 × 1012 cm−2 to 9 × 1012 cm−2 with an HWHM (towards the substrate) ranging from 3.5 nm to 6.2 nm. We also demonstrate a high-density (ns: 6.4 × 1012 cm−2) degenerate electron sheet charge in a delta-doped β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructure. The total charge could also include a contribution from a parallel channel in the β-(Al0.26Ga0.74)2O3 alloy barrier.
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