Abstract

The use of semiconductor detectors in delayed coincidence measurements of shor nuclear half-lives is considered. Their use is illustated by an accurate measurement of the half-life of the 86.5 keV excited state in 233Pa. A result of (37.7±0.2) ns was obtained. The result of a measurement of the half-life of the 59.6 keV level in 237Np is also reported. The value obtained was (68.5±0.4) ns. Both these results are in good agreement with previous recent determinations.

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