Abstract
Specific experiments were conducted to investigate the validity of various models designed to explain the long time delay between the application of a current pulse and the generation of coherent oscillations in certain GaAs junction lasers near room temperature. A particular model is developed which leads to good quantitative agreement with a number of different experiments performed in the temperature range between 200 and 300°K. It is found that all facets of the delay can be explained by assuming that a moderate number of optical absorbing centers (> 10 16 cm -3) causes optical losses which are sufficient to prevent the diode from lasing until these centers are filled by electrons injected into the p-side of the junction. It is postulated that the relatively long filling time of these traps is caused by a coulomb barrier such as is displayed by double acceptors in II–VI compounds.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have