Abstract

Negative-bias temperature instability (NBTI) represents one of the most severe reliability issues for pMOS transistors in logic and analog applications. Accurate reliability predictions require physically based models for NBTI and accurate methods for the estimation of time and temperature kinetic parameters, namely, the power-law time exponent and the activation energy. Describing on-the-fly degradation data by power-law time dependence and Arrhenius thermal activation, we present here a new methodology for estimating the power-law exponent and the activation energy. This allows for physics-based compact models and reliability extrapolations of NBTI.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.