Abstract
Negative-bias temperature instability (NBTI) represents one of the most severe reliability issues for pMOS transistors in logic and analog applications. Accurate reliability predictions require physically based models for NBTI and accurate methods for the estimation of time and temperature kinetic parameters, namely, the power-law time exponent and the activation energy. Describing on-the-fly degradation data by power-law time dependence and Arrhenius thermal activation, we present here a new methodology for estimating the power-law exponent and the activation energy. This allows for physics-based compact models and reliability extrapolations of NBTI.
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