Abstract
Negative Bias Temperature Instability (NBTI) stress and recovery time kinetics fromReplacement Metal Gate (RMG) High-K Metal Gate (HKMG) p-channel FinFETs are measured and modeled. The impact of channel length (L) scaling on shift in threshold voltage ($\mathrm{V}_{T})$,its power-law time exponent (n), Voltage Acceleration Factor (VAF) and Temperature (T) activation $( \mathrm{E}_{A})$ is analyzed. TCAD and band structure calculations are utilized to explain the L dependence of experimental data.
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