Abstract
Abstract In this paper, the experiments of proton irradiation on optocoupler are presented. The degradations of current transfer ratio (CTR) are analyzed, and the mechanisms induced by radiation are also demonstrated. The degradations of primary photocurrent are analyzed, which may be attributed to the photoresponse degradation in collector-base junction of phototransistor. The parameter degradations of light-emitting diode (LED) after irradiation play a role too. The degradations of transistor gain change the dependence of CTR on forward current. Finally, integration research from the irradiation-sensitive parameter degradation to the CTR degradation of the optocoupler is achieved.
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