Degradation of body factor (γ) of single gate fully depleted SOI MOSFETs due to short channel effects

Anil Kumar Anil Kumar,T Nagumo,T Hiramoto,G Tsutsui

doi:10.1109/soi.2004.1391554

Degradation of body factor (γ) of single gate fully depleted SOI MOSFETs due to short channel effects

Anil Kumar Anil Kumar, T Nagumo + Show 2 more

https://doi.org/10.1109/soi.2004.1391554

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Publication Date: Oct 4, 2004

Citations: 1

Affiliation: The University of Tokyo, Tokyo University of Science

#Spl Gamma #FD SOI MOSFETs + Show 8 more

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Abstract

In this article, the expression of effective back gate potential for short channel single gate FD SOI MOSFETs is investigated. The expression of /spl gamma/ is obtained analytically for the first time, and it is shown that /spl gamma/ degrades due to the channel effect in FD SOI MOSFETs. The relationship between S factor and /spl gamma/ in short channel single gate FD SOI MOSFET is also clarified.

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