Abstract
We have observed the onset of degradation of bipolar transistor characteristics under high current forward stress at room temperature. The observed degradation may be attributed to interface states generated next to the sidewall oxide at the emitter base junction in a self-aligned bipolar transistor. Individual steps in the generation and annealing kinetics may be resolved. The sensitivity of the device to the extrinsic base doping profile is demonstrated and a model based on the generation of hot carriers by Auger recombination and bond breaking by these hot carriers is proposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
