Degradation mapping in high power IGBT modules using four-point probing

Abstract

An electrical four-point probing approach is used to estimate local degradation in high power insulated gate bipolar transistor modules subjected to power cycling. By measuring electrical parameters of selected units and components the possibility of mapping the degradation is demonstrated. The development of failures is put in accordance with physical phenomena and materials fatigue. These results are directly usable for reliability purposes with a focus on geometry optimization and enhanced lifetime prediction methods.