Abstract
The evolution of HfO 2(3–5 nm)/SiO 2(0.5 nm)/Si(1 0 0) stacks during vacuum annealing was monitored in situ with the combination of X-ray photoelectron spectroscopy and low energy ion scattering techniques and supplemented with atomic force microscopy analysis to investigate the mechanism that triggers HfO 2 degradation with Hf silicide formation. The reduction of SiO 2 interfacial layer and the formation of local paths for SiO escape into vacuum are believed to be critical at vacuum annealing above T > 850 °C for the reaction between HfO 2 and Si to start and eventually lead to the degradation of the former.
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