Abstract
In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.
Highlights
With the recent advancement in technology, III-Nitride materials have gained tremendous attention due to their exceptional light emission characteristics ranging from ultraviolet region to blue & green region of electromagnetic spectrum.[1,2] For instance, GaN-based blue and green lightemitting diodes (LEDs) have been employed in traffic lamps and color displays
III-Nitride materials are known to have strong polarization induced electric fields due to their wurtzite crystal geometry as well as strain between the epilayers due to lattice mismatch. This results in quantum-confined stark effect (QCSE) causing spatial separation of the electron-hole wavefunctions within the quantum well reducing the radiative recombination probability[13,14,15,16,17] and results in efficiency droop
We have performed numerical simulations in order to find out the influence of the roles of internal polarization effect as well as the role of Auger recombination on the efficiency droop of internal quantum efficiency (IQE) of GaN-based vertical single quantum well (SQW) and multiquantum well (MQW) as well as lateral SQW and MQW LED structures
Summary
With the recent advancement in technology, III-Nitride materials have gained tremendous attention due to their exceptional light emission characteristics ranging from ultraviolet region to blue & green region of electromagnetic spectrum.[1,2] For instance, GaN-based blue and green lightemitting diodes (LEDs) have been employed in traffic lamps and color displays. III-Nitride materials are known to have strong polarization induced electric fields due to their wurtzite crystal geometry as well as strain between the epilayers due to lattice mismatch. This results in quantum-confined stark effect (QCSE) causing spatial separation of the electron-hole wavefunctions within the quantum well reducing the radiative recombination probability[13,14,15,16,17] and results in efficiency droop. We have performed numerical simulations in order to find out the influence of the roles of internal polarization effect as well as the role of Auger recombination on the efficiency droop of internal quantum efficiency (IQE) of GaN-based vertical SQW and MQW as well as lateral SQW and MQW LED structures. The influence of the two key parameters on the IQE has not been discussed, according to our knowledge, on the basis of two different device structures
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