Abstract
Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH4OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.
Highlights
INTRODUCTIONInGaAs is an attractive candidate to be used as a channel material for the extension of CMOS (Complementary MetalOxide-Semiconductor) technology beyond Si due to its high electron mobility. Lacking a good native oxide interface, a major challenge is the reduction of the density of interface states, since it causes Fermi level pinning, leading to degradation of charge concentration in the channel and affecting the response of metal-oxide-semiconductor field effect transistors (MOSFETs)
InGaAs is an attractive candidate to be used as a channel material for the extension of CMOS (Complementary MetalOxide-Semiconductor) technology beyond Si due to its high electron mobility.1 Lacking a good native oxide interface, a major challenge is the reduction of the density of interface states, since it causes Fermi level pinning, leading to degradation of charge concentration in the channel and affecting the response of metal-oxide-semiconductor field effect transistors (MOSFETs).2Recent works have focused on the control of surface oxidation since the creation of interface states is often attributed to semiconductor surface oxidation.3–5 In particular, the influence of pre-dielectric deposition NH4OH treatment on the oxide-semiconductor interface to suppress the formation of surface oxidation has been studied
The results show that the degradation, under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples
Summary
InGaAs is an attractive candidate to be used as a channel material for the extension of CMOS (Complementary MetalOxide-Semiconductor) technology beyond Si due to its high electron mobility. Lacking a good native oxide interface, a major challenge is the reduction of the density of interface states, since it causes Fermi level pinning, leading to degradation of charge concentration in the channel and affecting the response of metal-oxide-semiconductor field effect transistors (MOSFETs).. The influence of pre-dielectric deposition NH4OH treatment on the oxide-semiconductor interface to suppress the formation of surface oxidation has been studied. Effort has been performed to reduce the density of border traps and/or interface states, but more information is needed to describe and model the mechanisms responsible for the degradation on high-k dielectric/InGaAs stacks. The influence of the oxide-semiconductor interface on the degradation is studied by the dynamics of the flat band voltage (VFB) under different polarities of the stress voltage. In the first part of the manuscript, the quality of the Al2O3/InGaAs interface treated by NH4OH and its influence on the electrical characterization are analyzed, while the second part is focused on the study of the dynamics of degradation of the flat band voltage (VFB) and the generation of defects at interfaces of the stack
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