Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon‐on‐Insulator for Photonic Crystal Surface‐Emitting Lasers

Abstract

AbstractPhotonic crystals can be used to achieve high‐performance surface‐emitting lasers and enable novel photonic topological insulator devices. In this work, a GaAs/InGaAs heterojunction nanowire platform by selective area metalorganic vapor phase epitaxy for such applications is demonstrated. The nanowires are arranged into deformed honeycomb lattices on silicon‐on‐insulator substrate to exploit the quadrupolar photonic band‐edge mode. Core–shell and axial heterostructures are formed with their crystalline properties studied by scanning transmission electron microscopy. Room‐temperature, single mode lasing from both stretched and compressed honeycomb lattices within the telecom‐O band, with lasing threshold as low as 1.25 µJ cm−2 is demonstrated. The potential of using InGaAs nanowire‐based honeycomb lattices for small‐divergence surface‐emitting lasers and topological edge mode lasers is investigated. Finite‐difference time‐domain far field simulations suggest a sub‐10° beam divergence can be achieved thanks to the out‐of‐plane diffraction.