Fabrication and transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy

Abstract

GaAs wire transistors and single electron transistors (SETs) were successfully fabricated using GaAs/AlGaAs modulation doped structures grown by selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (0 0 1) masked GaAs substrates. The results of magnetoresistance of wire transistors applying the negative gate bias show the one-dimensional transport. In SETs, near the pinch-off voltage, Coulomb blockade type conductance oscillations were observed up to 65 K. Coulomb gap and total capacitance C Σ were estimated to be 12 mV and 13 aF, respectively. Fabrication process and transport properties of the devices were described.