Abstract
The interaction of ultrasonic phonons with charge carriers in nearly intrinsic InSb via deformation potential and piezoelectric coupling mechanisms has been investigated at 296 K in magnetic fields of 0 to 11 kOe and over a frequency range of 10 to 200 MHz. The single crystal InSb was p type with an average acceptor concentration of (1.45±0.05)×1016 cm−3. The experiment permitted an ultrasonic determination of the electron and hole mobilities. The values obtained were μn0 = (58 000±4000) cm2 V−1 sec−1 and μp0 = (720±80) cm2 V−1 sec−1. Values of the deformation potential and piezoelectric coupling constants obtained were | Cn+Cp | = (5.8±0.4) eV and e14 = | 0.076±0.010 | C/m2.
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