Abstract
Available data on the temperature dependence of yield stress and of associated activation volume of high-purity NiAl single crystals between 76 and 205 K have been analyzed within the framework of a solid-solution hardening model, which is based on the concept of depinning of an edge-dislocation segment from several randomly dispersed, isolated, point defects simultaneously. The vacancies in NiAl single crystals act as point-defect obstacles to the stress-assisted thermally-activated glide of edge dislocations, and their concentration is estimated as about 10at.%. The product of yield stress and associated activation volume (≈0.146 eV) is found to be independent of temperature and yield stress, as envisaged in the model.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
