Abstract
AbstractTwo methods of defect‐selective etching of SiC are described: (i) orthodox etching in molten KOH–NaOH eutectic with 10% of MgO powder (E + M etch) and (ii) electroless photo‐etching in aqueous KOH solutions (PEC method). The first etch shows similar effectiveness in revealing different type of dislocations, micropipes and stacking faults, as the commonly used molten KOH. The second approach is new for studying defects in SiC and is most suitable for revealing stacking faults both on the disoriented (0001) basal planes and on the ($1 \bar1 00$) cleavage surfaces. Cross‐calibration of both techniques and examples of calibration of PEC etch features by TEM are shown. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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