Abstract
Bulk Czochralski and VPE layers of n-GaAs have been irradiated with 1 MeV electrons at about 300°C, temperature at which primary defects are not stable. Up to seven electron traps are thus observed to be introduced. The dominant trap (I1) has an activation energy and a capture cross section very close to the so-called EL2 center, which suggests that EL2 could be introduced by a high temperature electron irradiation. The introduction rate of I1 is about 1cm-1, that is the same order of magnitude as those of the traps (E-traps) introduced by a room temperature irradiation, and two orders of magnitude larger than those of the traps observed after the annealing (200–300°C) of the E-traps. With a starting dopant concentration of 2×1016cm-3, we have obtained a quite complete compensation of free carriers after a total fluence of 1017e/cm2.
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