Abstract
Deuterium and helium ion bombardments of silicon have been performed in the range of 300–673 K as simulation experiments of the effect of protons and helium produced by nuclear reactions with D-T neutrons. The irradiation-induced defects were investigated by transmission electron microscopy and positron annihilation techniques. The spatial distribution of the defects was compared with simulation calculations made using the TRIM-3D code. It was found that cavities were formed by He + ion bombardment with doses greater than 2 × 10 21 ions/ m 2, but not by D + ion bombardment. {113} interstitial type dislocation loops have been observed by bombardments both with D + and He + ions. It was found that the implanted He + and D + ions behave differently for the nucleation of irradiation-induced secondary defects.
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