Abstract
Deep level transient spectroscopy and resistivity measurements have been used to characterize defects in as-grown and neutron irradiated epitaxially grown 3C-SiC on Si(100) substrates. The thick epilayers were free of defects; neutron irradiation induced an electron trap with an activation energy of 0.49 eV. The SiC-Si interface has a large density of defects and dislocations. Most of the irradiation defects are confined to the lower two-thirds of the band gap. Ninety percent of these defects can be removed by annealing at 350 °C.
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