Defects in In [formula omitted] simultaneously observed by channeling and PAC

Abstract

The channeling of conversion electrons with energies of 145 and 219 keV emitted from 111In embedded in a Cu single crystal was investigated and used to localize the In impurities on substitutional sites after implantation. Electron channeling was performed simultaneously with perturbed γγ-angular correlation (PAC) experiments using the γγ-cascade in the decay of 111In to study the radiation damage produced by the implantation of the probe atoms. The channeling effect is influenced by the formation of defects at the impurities as indicated by the PAC.