Abstract
In this paper, the theory of dislocation density and curvature measurements from X-ray rocking curves is extended to the case of double oxide heteroepitaxial CeO 2(0 0 1)/YSZ(0 0 1)/Si(0 0 1) films mainly by high-resolution X-ray diffraction. According to this theory, we have successfully resolved the rocking curves of CeO 2 and YSZ by two simple components. Thus, the dislocation density and radius of curvature of each layer can be calculated from the distribution of the square of measured FWHM versus 1/sin 2 θ. The results show that the YSZ layer has a higher dislocation density and a lower radius of curvature than CeO 2. The high-resolution transmission electron microscopy (TEM) image of CeO 2/YSZ interface cross-section shows a high dislocation density along the interface with an average interval ∼3.9 nm.
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