Abstract
Defect processes were studied in electron-irradiated, Ga-doped silicon using deep level transient spectroscopy. Evidence for the production of a Ga-related defect state is presented. Changes in minority-carrier lifetime are correlated with recovery and growth of defect states in annealing studies of Ga-doped silicon.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
