Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure

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Defect structure of Czochralski-grown oxygen-containing silicon–germanium (Si–Ge) samples with Ge content 1.5×10 18 cm −3, subjected to processing for 5 h at up to 1400 K under hydrostatic Ar pressure up to 1.1 GPa, has been investigated by synchrotron topography (at HASYLAB), high-resolution X-ray diffraction, photoluminescence and related methods. Ge admixture prevents formation of extended defects at processing done under 10 5 Pa. Such defects are created, however, in Si–Ge processed at 1400 K under high pressure (1.1 GPa).