Abstract
A modified method of optical defectoscopy of ZnGeP2 single crystal plates using a strontium vapour laser (λ = 1.03 and 1.09 μm) is proposed based on shadow imaging of internal defects in plates cut parallel to the (100) plane. It is shown that the use of a strontium vapour laser with a wavelength of 6.45 mm makes it possible to study inhomogeneities in large-size ZnGeP2 samples. The possibility of fabricating a projection defectoscope for monitoring breakdown development in ZnGeP2 crystals is considered.
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