Abstract
We have observed first order Raman scattering from phonons with non-zero wave-vectors in boron implanted samples of GaAs. In addition to the sharp peaks due to the normally allowed TO and LO phonons at the Г-point, a continuous spectrum extending between 20 cm -1 and the LO phonon frequency (292 cm -1) is observed. The structures in this continuous spectrum can be closely correlated with those in the one-phonon density of states of pure GaAs, and the temperature dependence of its Raman scattering intensity shows that it is due to one phonon processes. We conclude that the observed continuous spectrum is due to defect-activated first order Raman scattering.
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