Abstract

The interface traps created by ionizing radiation or hot-electron injection in MOS capacitors have been found to undergo significant changes with time over an extended period (several months). Immediately after radiation or hot-electron damage, a interface trap peak above midgap (~ E v + 0.75eV) invariably appears. This peak, along with its background, would continuously change with time after damage, and one sailent feature of this change is the gradual conversion of this peak to a second peak located below midgap (~ E v + 0.35eV). The rate of this interfacial defect transformation process is a function of the device structure, its processing parameters, the details of the radiation or hot-electron treatment, the gate bias polarity, and the process is thermally activated. These and other pertinent results will be discussed.

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