Abstract
We present the results of a combined study of the defect structure and residual stress in a diamond layer, grown by PECVD on a polycrystalline copper substrate with a titanium interlayer. For the defect studies, electron spectroscopies based on electron-positron annihilation were applied. X-ray diffraction techniques were used for both the stress determination in the diamond layer and for a phase analysis of the complete composite structure. The layer was found to contain a significant fraction of vacancy clusters and single vacancy type defects, which are probably situated within the individual grains. The presence of the larger defects may be related to a compressive stress in the layer.
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