Abstract
Transmission electron microscopy has been used to study the defect structure in liquid encapsulated Czochralski GaP doped with 2×1018 S atoms cm−3. Dislocation clusters, stacking faults and precipitates were observed and analysed in as-grown, annealed and zinc diffused materials. In as-grown and annealed GaP both the perfect and faulted dislocation loops were shown to be interstitial in nature while the precipitates were found to be incoherent and tetrahedral in shape. Prolonged zinc diffusion was shown to increase the dislocation density and cause the precipitates to become coherent.
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