Abstract
In undoped a-Si:H metastable changes of gap state profiles with light-soaking and reverse bias annealing have been investigated by modulated photocurrent measurements. The gap state distribution above midgap shows a correlation with the Fermi level position, with a minimum at E f and in addition to the midgap defect band a peak above E f. Light-soaking increases the overall defect density whereas after reverse bias annealing only the band above E f is increased and the DOS below E f is quenched. The experimental results are inconsistent with the idea of two defect bands produced by one set of defects in different charge states.
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