Defect States and Charge Transport in Quantum Dot Solids

Abstract

Defects at the surface of semiconductor quantum dots (QDs) give rise to electronic states within the gap, which are detrimental to charge transport properties of QD devices. We investigated charge transport in silicon quantum dots with deep and shallow defect levels, using ab initio calculations and constrained density functional theory. We found that shallow defects may be more detrimental to charge transport than deep ones, with associated transfer rates differing by up to 5 orders of magnitude for the small dots (1–2 nm) considered here. Hence, our results indicate that the common assumption, that the ability of defects to trap charges is determined by their position in the energy gap of the QD, is too simplistic, and our findings call for a reassessment of the role played by shallow defects in QD devices. Overall, our results highlight the key importance of taking into account the atomistic structural properties of QD surfaces when investigating transport properties.