Abstract
For investigations of the defect spectra of CuInSe 2 epitaxial thin films are grown on GaAs (0 0 1) wafers using metal organic vapor phase epitaxy. The photoluminescence spectra for p-type Cu-rich ([Cu]/[In]>1.05) CuInSe 2 are dominated by one donor acceptor pair transition at 0.972 eV. For slightly Cu-poor and stoichiometric samples a free to bound transition at 0.992 eV is observed. Also an exciton emission could be detected at E FX=l.032 eV indicating a bandgap of E G=1.038 eV at 10 K. These results can be combined in a defect model for CuInSe 2 containing two acceptors states with 40 and 60 meV and a compensating 6 meV donor state.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
