Abstract
Nitrogen- and antimony-doped thin layers have been grown by metal organic vapour phase epitaxy (MOVPE) at 950 °C. The nitrogen- and antimony-doped layers have been characterized by Raman scattering and photoluminescence (PL) spectroscopy. In nitrogen-doped layers, we have observed several Raman lines from local vibrational modes related to nitrogen. Low temperature PL spectra exhibit donor-acceptor pair (DAP) transitions on both nitrogen- and antimony-doped layers. The DAP transitions have been analysed versus temperature and excitation power experiments. The acceptor binding energy of antimony in ZnO is evaluated to 200 meV.
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