Abstract
The stability of prototypical defect morphologies in thin films of symmetric diblock copolymers on chemically patterned substrates is investigated by self-consistent field theory. The excess free energy of defects and barriers of defect-removal mechanisms are obtained by computing the minimum free-energy path. Distinct defect-removal mechanisms are illustrated demonstrating that (i) defects will become unstable at a characteristic value of incompatibility χN* above the order-disorder transition and (ii) the kinetics is accelerated at weak segregation. Numerical findings are placed in the context of physical mechanisms, and implications for directed self-assembly are discussed.
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