Abstract
ABSTRACTThis paper describes a novel synthesis route for producing defect-free siliclon nitride films that are demonstrated to provide state of the art electrical performance in MOS devices with stacked oxidenitride gate dielectrics in both nmos and pmos devices. High concentrations of bonded hydrogen are introduced into the as-deposited nitride films during a 300°C remote plasma-enhanced deposition, and then the majority of this hydrogen is evolved during a 30 second rapid thermal anneal (RTA) at 900°C. The nitride formed in this way is effectively “defect-free” and qualitatively different from nitride films formed by conventional chemical vapor deposition processes.
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