Abstract
Defect reactions associated with the elimination of divacancies(V2) have been studied in n-type Czochralski (Cz) grown and float-zone (FZ) grown Si crystals bymeans of conventional deep-level transient spectroscopy and high-resolution Laplace deep-leveltransient spectroscopy (LDLTS). Divacancies were introduced into the crystals by irradiationwith 4 MeV electrons. Temperature ranges of the divacancy disappearance were found to be225–275 °C in Cz Sicrystals and 300–350 °C in FZ Si crystals upon 30 min isochronal annealing. Simultaneously with theV2 disappearance in Cz Si crystals a correlated appearance of twoelectron traps with activation energies for electron emission 0.23 eV{E(0.23)} and0.47 eV {E(0.47)} was observed. It is argued that the main mechanism of theV2 disappearance in Cz Si crystals is related to the interaction of mobile divacancieswith interstitial oxygen atoms. This interaction results in the formation ofV2O centres, which areresponsible for the E(0.23) and E(0.47) traps. Electronicproperties of the V2O complex were found to be very similar to those ofV2 but energy levels of the two defects could easily be separated using LDLTS.In FZ Si crystals, a few electron traps appeared simultaneously with theV2 annihilation. The small concentration of these traps compared with theV2 concentration before annealing prevented their reliable identification.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
