Defect pairing diffusion, and solubility studies in selenium-doped silicon

Abstract

Se was diffused into Si doped with various concentrations of the group-III elements B, Ga, Al, or In. Selenium acting as a double donor in silicon is found to pair with all the acceptors from the group-III examined, and the Se-acceptor pairs give rise to a donor level at Ec−0.2 eV. An additional donor level at Ec−0.3 eV is assigned to the first ionization level of selenium in silicon. Solubility of Se in silicon in the temperature range 850–1300 °C has been established through Hall-effect measurements. The diffusion coefficient measurements between 800 and 1250 °C yielded 2.47 exp(−2.84 eV/kT) cm2/sec for the diffusion coefficient of Se, DSe.