Defect of Te-doped GaSb layers grown by molecular beam epitaxy

Abstract

In this paper we present the results of positron annihilation doppler broadening spectroscopy(PADB),X-ray diffraction spectra(XRD),and atomic force microscopy(AFM) measurements on the undoped GaSb and Te-doped GaSb films grown on GaAs substrate by molecular beam epitaxy(MBE).Research shows that the S parameter is smaller in GaSb film than the bulk material.The defects in the Te-doped N-type semiconductor GaSb obtained by MBE are mainly vacancies and impurity atoms instead of complex defects.