Defect model and a unified approach to electrical properties in dielectric films

Abstract

It is noted that although the electrical properties of dielectric thin films have been studied for some time, no systematic approach has emerged which fully explains their relationship to inherent defects in the films. The authors propose a unified approach to interpret the experimental data on these properties. First, they discuss general experimental observations on the structure, electrical conduction, and breakdown processes in thin films. This is followed by a stochastic model that explains these experimental observations. Finally, the authors describe the microscopic picture of conduction to breakdown in thin dielectric films. >