Abstract
Self-assembled monolayers (SAMs) can be used for surface functional control to assist with pattern collapse prevention and as a protective layer to enable Area Selective Deposition (ASD). To be successful, these applications require the formation of a high-density, defect-free, so-called well-packed SAM at the nm scale. In this paper, we describe a method to map the nm scale defects of octadecyltrichlorosilane (ODTS) SAMs using a post-etching AFM analysis of the surface of the substrate and used this technique to develop a process to form high-density, defect-free SAM layer at the nm scale. This was achieved by optimizing the water concentration in the solvent for the precursor solution and annealing after SAM formation.
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