Abstract
We report a differential scanning photocapacitance microscopy technique based on the detection of light-induced capacitance changes allowing mapping of metal interconnection line defects in through-silicon-via (TSV) structures used in three-dimensional (3-D) integration technology. Due to the photosensitive silicon depletion capacitance, observation of the photocapacitance response enables non-destructive two-dimensional (2-D) visualization of metallization line ruptures in TSV structures. We demonstrate the application of the proposed method on a TSV chain structure and reveal the location of the open metallization rupture.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
