Abstract
Nuclear detector grade semi-insulating Cd0.9Zn0.1Te (CZT) crystals were grown by a low temperature solution method from in-house zone refined precursor materials. The extended defects due to secondary phases of tellurium inclusions/precipitates in the grown crystals were characterized by a non-destructive electron beam induced current (EBIC) imaging method. The EBIC results were correlated with the infrared (IR) transmittance mapping, which clearly shows the variation of contrast is due to non-uniform distribution of tellurium inclusions/precipitates in CZT crystals. Electrical characteristics of defect levels in the fabricated detectors were further investigated by thermally stimulated current (TSC) measurements. Pulse height spectra (PHS) measurements were carried out using nuclear radiation sources of 241Am (59.6 keV) and 137Cs (662 keV) and energy resolutions of 6.2% and 1.6% respectively were achieved.
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